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Part #: RFP10P12
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:HARRIS SEMICONDUCTOR
Description:Power Field-Effect Transistor, 10A I(D), 120V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RFP10P12 SPECIFICATIONS
| Status | Discontinued |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 120.0000000000000000 |
| Drain Current-Max (ID) (A) | 10.0000000000000000 |
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RFP10P12 Datasheet & Equivalents - HARRIS SEMICONDUCTOR - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #RFP10P12
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