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Part #: RF1K4909396
OtherPart Category:Power Field-Effect Transistors
Manufacturer:HARRIS SEMICONDUCTOR
Description:Power Field-Effect Transistor, 2.5A I(D), 12V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
RF1K4909396 SPECIFICATIONS
| Status | Transferred |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 12.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.5000000000000000 |
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