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Part #: RD100HHF1
ObsoletePart Category:RF Power Field-Effect Transistors
Manufacturer:MITSUBISHI ELECTRIC CORP
Description:RF Power Field-Effect Transistor, 1-Element, High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RD100HHF1 SPECIFICATIONS
| Status | Discontinued |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 50.0000000000000000 |
| Drain Current-Max (ID) (A) | 25.0000000000000000 |
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