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Part #: RD07MVS1-T514
ActivePart Category:RF Power Field-Effect Transistors
Manufacturer:MITSUBISHI ELECTRIC CORP
Description:RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RD07MVS1-T514 SPECIFICATIONS
| Status | Active |
| Case Connection | SOURCE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.0000000000000000 |
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