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Part #: QS8F2TR
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:ROHM CO LTD
Description:Power Field-Effect Transistor, 2.5A I(D), 12V, 0.061ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
QS8F2TR SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND DIODE |
| DS Breakdown Voltage-Min (V) | 12.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.5000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0610000000000000 |
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