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Part #: QPD2025D
ActivePart Category:RF Power Field-Effect Transistors
Manufacturer:QORVO INC
Description:RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, P-Channel, High Electron Mobility FET
QPD2025D SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 12.0000000000000000 |
| FET Technology | HIGH ELECTRON MOBILITY |
| Highest Frequency Band | K BAND |
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