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QPD1010 Datasheet - QORVO INC - Datasheets360.comPart #: QPD1010
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:QORVO INC
Description:RF Power Field-Effect Transistor, 1-Element, S Band, Silicon Carbide, N-Channel, High Electron Mobility FET
QPD1010 SPECIFICATIONS
| Status | Transferred |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| Drain Current-Max (ID) (A) | 1.1500000000000000 |
| FET Technology | HIGH ELECTRON MOBILITY |
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