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QJD0142002 Datasheet - POWEREX INC - Datasheets360.comPart #: QJD0142002
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:POWEREX INC
Description:Power Field-Effect Transistor, 100V, 0.0033ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
QJD0142002 SPECIFICATIONS
| Status | Discontinued |
| Case Connection | ISOLATED |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0033000000000000 |
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