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Part #: PSMN2R5-60PL
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Power Field-Effect Transistor, 150A I(D), 60V, 0.00315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PSMN2R5-60PL SPECIFICATIONS
| Status | Transferred |
| Avalanche Energy Rating (Eas) (mJ) | 521.7000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 150.0000000000000000 |
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