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PMX800ENE Datasheet - NEXPERIA - Datasheets360.comPart #: PMX800ENE
ActivePart Category:Power Field-Effect Transistors
Manufacturer:NEXPERIA
Description:Power Field-Effect Transistor, 0.5A I(D), 60V, 1.1ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
PMX800ENE SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.5000000000000000 |
| Drain-source On Resistance-Max (ohm) | 1.1000000000000000 |
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