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PMV65UN Datasheet - NEXPERIA - Datasheets360.comPart #: PMV65UN
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:NEXPERIA
Description:Power Field-Effect Transistor, 2A I(D), 20V, 0.076ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-236AB
PMV65UN SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20 |
| Drain Current-Max (ID) (A) | 2 |
| Drain-source On Resistance-Max (ohm) | 0.076 |
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