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Part #: PMV50ENEA
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NEXPERIA
Description:Power Field-Effect Transistor, 3.9A I(D), 30V, 0.043ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-236AB
PMV50ENEA SPECIFICATIONS
| Status | Unknown |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Rating (Eas) (mJ) | 9.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
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