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Part #: PMV33UPE,215
ActivePart Category:Power Field-Effect Transistors
Manufacturer:NEXPERIA
Description:Power Field-Effect Transistor, 4.4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, TO-236AB
PMV33UPE,215 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20 |
| Drain Current-Max (ID) (A) | 4.4 |
| Drain-source On Resistance-Max (ohm) | 0.065 |
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PMV33UPE,215 Datasheet - NEXPERIA - Datasheets360.com