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Part #: PMV213SN
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NEXPERIA
Description:Power Field-Effect Transistor, 1.9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
PMV213SN SPECIFICATIONS
| Status | Unknown |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.9000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.2500000000000000 |
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Equivalent Parts: Part #PMV213SN
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