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Part #: PMPB200EN
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Power Field-Effect Transistor, 1.8A I(D), 100V, 0.235ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
PMPB200EN SPECIFICATIONS
| Status | Transferred |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100 |
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