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Part #: PMN55ENE
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NEXPERIA
Description:Power Field-Effect Transistor, 3.4A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
PMN55ENE SPECIFICATIONS
| Status | Unknown |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60 |
| Drain Current-Max (ID) (A) | 3.4 |
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