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PMGD400UN Datasheet - NXP SEMICONDUCTORS - Datasheets360.comPart #: PMGD400UN
OtherPart Category:Small Signal Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Small Signal Field-Effect Transistor, 0.71A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PMGD400UN SPECIFICATIONS
| Status | Transferred |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.7100000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.4800000000000000 |
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