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PMGD290UCEA Datasheet - NXP SEMICONDUCTORS - Datasheets360.comPart #: PMGD290UCEA
OtherPart Category:Small Signal Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Small Signal Field-Effect Transistor, 0.725A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
PMGD290UCEA SPECIFICATIONS
| Status | Transferred |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.7250000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.3800000000000000 |
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