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PMCXB900UE Datasheet - NXP SEMICONDUCTORS - Datasheets360.comPart #: PMCXB900UE
OtherPart Category:Small Signal Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Trench Mosfet FET
PMCXB900UE SPECIFICATIONS
| Status | Transferred |
| Case Connection | DRAIN |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.6000000000000000 |
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