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PMCM950ENE Datasheet - NEXPERIA - Datasheets360.comPart #: PMCM950ENE
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:NEXPERIA
Description:Power Field-Effect Transistor, 4.8A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
PMCM950ENE SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60 |
| Drain Current-Max (ID) (A) | 4.8 |
| Drain-source On Resistance-Max (ohm) | 0.047 |
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