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Part #: PJP1N80
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:PANJIT INTERNATIONAL INC
Description:Power Field-Effect Transistor, 1A I(D), 800V, 16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PJP1N80 SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 9.8000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 800.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.0000000000000000 |
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PJP1N80 Datasheet & Equivalents - PANJIT INTERNATIONAL INC - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #PJP1N80
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