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Part #: PJP10N65
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:PANJIT INTERNATIONAL INC
Description:Power Field-Effect Transistor, 10A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PJP10N65 SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 750.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain Current-Max (ID) (A) | 10.0000000000000000 |
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Equivalent Parts: Part #PJP10N65
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