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Part #: PHT6N06LT115
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Power Field-Effect Transistor, 2.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PHT6N06LT115 SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
| Avalanche Energy Rating (Eas) (mJ) | 15.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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Equivalent Parts: Part #PHT6N06LT115
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