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Part #: PHK12NQ03LT
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Power Field-Effect Transistor, 11.8A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
PHK12NQ03LT SPECIFICATIONS
| Status | Transferred |
| Avalanche Energy Rating (Eas) (mJ) | 440.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 11.8000000000000000 |
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