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Part #: PHB3N50
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Power Field-Effect Transistor, 3.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PHB3N50 SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 210.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
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Equivalent Parts: Part #PHB3N50
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