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Part #: PHB2N60E118
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Power Field-Effect Transistor, 1.9A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PHB2N60E118 SPECIFICATIONS
| Status | Unknown |
| Additional Feature | FAST SWITCHING |
| Avalanche Energy Rating (Eas) (mJ) | 144.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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Equivalent Parts: Part #PHB2N60E118
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