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PH3120L Datasheet - NXP SEMICONDUCTORS - Datasheets360.comPart #: PH3120L
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Power Field-Effect Transistor, 100A I(D), 20V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
PH3120L SPECIFICATIONS
| Status | Transferred |
| Avalanche Energy Rating (Eas) (mJ) | 210.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
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