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PDN3909S Datasheet - POTENS SEMICONDUCTOR CORP - Datasheets360.comPart #: PDN3909S
OtherPart Category:Power Field-Effect Transistors
Manufacturer:POTENS SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 5.1A I(D), 30V, 0.032ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET
PDN3909S SPECIFICATIONS
| Status | Contact Mfr |
| Avalanche Energy Rating (Eas) (mJ) | 39.2000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 5.1000000000000000 |
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