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Part #: PDM505HA
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NIHON INTER ELECTRONICS CORP
Description:Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PDM505HA SPECIFICATIONS
| Status | Transferred |
| Case Connection | ISOLATED |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
| Drain Current-Max (ID) (A) | 35.0000000000000000 |
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