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Part #: OM11N60SAZT
OtherPart Category:Power Field-Effect Transistors
Manufacturer:INTERNATIONAL RECTIFIER CORP
Description:Power Field-Effect Transistor, 11A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA
OM11N60SAZT SPECIFICATIONS
| Status | Transferred |
| Additional Feature | HIGH RELIABILITY |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
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