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Part #: NXH003P120M3F2PTHG
ActivePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 350A I(D), 1200V, 0.005ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
NXH003P120M3F2PTHG SPECIFICATIONS
| Status | Active |
| Case Connection | ISOLATED |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| DS Breakdown Voltage-Min (V) | 1200.0000000000000000 |
| Drain Current-Max (ID) (A) | 350.0000000000000000 |
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