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Part #: NVBL0R5N04XC
ActivePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 300A I(D), 40V, 0.00057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-299A
NVBL0R5N04XC SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 1064.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
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Equivalent Parts: Part #NVBL0R5N04XC
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