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Part #: NUS5530MNR2G
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 3.9A I(D), 20V, 0.083ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
NUS5530MNR2G SPECIFICATIONS
| Status | Discontinued |
| Collector Current-Max (IC) (A) | 2.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND DIODE |
| DC Current Gain-Min (hFE) | 100.0000000000000000 |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
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