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NTTFD021N08C Datasheet - ONSEMI - Datasheets360.comPart #: NTTFD021N08C
ActivePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 24A I(D), 80V, 0.021ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NTTFD021N08C SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 31.0000000000000000 |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 80.0000000000000000 |
| Drain Current-Max (ID) (A) | 24.0000000000000000 |
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