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Part #: NTMYS025N06CLTWG
ActivePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 8.5A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NTMYS025N06CLTWG SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 44.6000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 8.5000000000000000 |
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