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Part #: NSFY30942
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NEW ENGLAND SEMICONDUCTOR
Description:Power Field-Effect Transistor, 3A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257
NSFY30942 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 900.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 4.2000000000000000 |
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