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Part #: NSFY30824
ActivePart Category:Power Field-Effect Transistors
Manufacturer:MICROCHIP TECHNOLOGY INC
Description:Power Field-Effect Transistor, 4.3A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257
NSFY30824 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 800.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.3000000000000000 |
| Drain-source On Resistance-Max (ohm) | 2.4000000000000000 |
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