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Part #: NSF60708
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NEW ENGLAND SEMICONDUCTOR
Description:Power Field-Effect Transistor, 11.5A I(D), 700V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204
NSF60708 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 700.0000000000000000 |
| Drain Current-Max (ID) (A) | 11.5000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.8000000000000000 |
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