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Part #: NSF40913
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NEW ENGLAND SEMICONDUCTOR
Description:Power Field-Effect Transistor, 9A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA
NSF40913 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 900.0000000000000000 |
| Drain Current-Max (ID) (A) | 9.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 1.3000000000000000 |
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