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Part #: NPT1012B
ActivePart Category:RF Power Field-Effect Transistors
Manufacturer:M/A-COM TECHNOLOGY SOLUTIONS INC
Description:RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET
NPT1012B SPECIFICATIONS
| Status | Active |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| FET Technology | HIGH ELECTRON MOBILITY |
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