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Part #: NP100P04PDG-E2-AY
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:RENESAS ELECTRONICS CORP
Description:Power Field-Effect Transistor, 100A I(D), 40V, 0.0051ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
NP100P04PDG-E2-AY SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 550.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
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NP100P04PDG-E2-AY Datasheet - RENESAS ELECTRONICS CORP - Datasheets360.com