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Part #: NJVMJD112G
ActivePart Category:Power Bipolar Transistors
Manufacturer:ONSEMI
Description:Power Bipolar Transistor, 2A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
NJVMJD112G SPECIFICATIONS
| Status | Active |
| Collector Current-Max (IC) (A) | 2.0000000000000000 |
| Configuration | DARLINGTON |
| DC Current Gain-Min (hFE) | 1000.0000000000000000 |
| JESD-30 Code | R-PSSO-G2 |
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NJVMJD112G Datasheet & Equivalents - ONSEMI - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #NJVMJD112G
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