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Part #: NGD8201BNT4G
OtherPart Category:Insulated Gate Bipolar Transistors
Manufacturer:ONSEMI
Description:Insulated Gate Bipolar Transistor, 15A I(C), 430V V(BR)CES, N-Channel
NGD8201BNT4G SPECIFICATIONS
| Status | Unknown |
| Collector Current-Max (IC) (A) | 15.0000000000000000 |
| Collector-emitter Voltage-Max (V) | 430.0000000000000000 |
| Fall Time-Max (ns) | 15000.0000000000000000 |
| Gate-emitter Thr Voltage-Max (V) | 1.8000000000000000 |
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