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Part #: NGB8207BNT4G
OtherPart Category:Insulated Gate Bipolar Transistors
Manufacturer:ONSEMI
Description:Insulated Gate Bipolar Transistor, 20A I(C), 365V V(BR)CES, N-Channel
NGB8207BNT4G SPECIFICATIONS
| Status | Transferred |
| Collector Current-Max (IC) (A) | 20.0000000000000000 |
| Collector-emitter Voltage-Max (V) | 365.0000000000000000 |
| Fall Time-Max (ns) | 15000.0000000000000000 |
| Gate-emitter Thr Voltage-Max (V) | 2.0000000000000000 |
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