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Part #: NFQ2001
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NEW ENGLAND SEMICONDUCTOR
Description:Power Field-Effect Transistor, 0.6A I(D), 30V, 2ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
NFQ2001 SPECIFICATIONS
| Status | Transferred |
| Configuration | SEPARATE, 4 ELEMENTS |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.6000000000000000 |
| Drain-source On Resistance-Max (ohm) | 2.0000000000000000 |
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