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Part #: NFD600
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NEW ENGLAND SEMICONDUCTOR
Description:Power Field-Effect Transistor, 11A I(D), 600V, 0.6ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NFD600 SPECIFICATIONS
| Status | Transferred |
| Configuration | SEPARATE, 2 ELEMENTS |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
| Drain Current-Max (ID) (A) | 11.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.6000000000000000 |
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