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Part #: NFD500
ActivePart Category:Power Field-Effect Transistors
Manufacturer:MICROCHIP TECHNOLOGY INC
Description:Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NFD500 SPECIFICATIONS
| Status | Active |
| Configuration | SEPARATE, 2 ELEMENTS |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
| Drain Current-Max (ID) (A) | 14.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.4000000000000000 |
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