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Part #: NES6060
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NEW ENGLAND SEMICONDUCTOR
Description:Power Field-Effect Transistor, 10.5A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
NES6060 SPECIFICATIONS
| Status | Transferred |
| Additional Feature | HIGH RELIABILITY |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
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