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NE5550779A-A Datasheet - RENESAS ELECTRONICS CORP - Datasheets360.comPart #: NE5550779A-A
ObsoletePart Category:RF Power Field-Effect Transistors
Manufacturer:RENESAS ELECTRONICS CORP
Description:RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET
NE5550779A-A SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | HIGH EFFICIENCY |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 25.0000000000000000 |
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