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Part #: NE3509M04-A
OtherPart Category:RF Small Signal Field-Effect Transistors
Manufacturer:NEC ELECTRONICS CORP
Description:RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET
NE3509M04-A SPECIFICATIONS
| Status | Transferred |
| DS Breakdown Voltage-Min (V) | 4.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.0600000000000000 |
| FET Technology | HETERO-JUNCTION |
| Highest Frequency Band | S BAND |
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